Area of Research:
The
focus of my group’s research is
investigating and perfecting the properties of oxide materials
for electronic uses. These oxides include dielectric
and ferroelectric materials, oxides for spintronic applications,
oxides with high dielectric constants to replace SiO2 as the
gate dielectric in metal-oxide-semiconductor field-effect transistors
(MOSFETs), oxide superconductors, and designer oxides whose
structures are built up literally an atomic layer at a time. We
perfect oxides by growing them on single crystals of closely
related substances including the semiconductor materials
that are the basis of our information age. The single
crystal provides a structural template for the thin single
crystal films that we grow. Our focus on oxides is
due to the tremendous promise that these materials hold for
electrical applications. Oxides exhibit an unparalleled
variety of electronic properties; insulators, semiconductors,
metals, superconductors, ferroelectrics, piezoelectrics,
and ferromagnets all exist within a set of structurally compatible
oxides known as perovskites. A major challenge, however,
is to prepare these materials with sufficient quality and
integrate them with adequate control so that these properties
can be fully utilized in electronic devices. This is
our research goal.
Exploiting the capabilities of oxide
materials for the most demanding electronic applications
requires the synthesis of custom-made stacks of single crystal
films, prepared in such a way that composition and structure
can be controlled at the level of single atomic layers. To
achieve this customized layering capability, our research
group utilizes a thin film growth method known as molecular-beam
epitaxy (MBE). |
| Journal
Articles and Publications:
1. K.J. Choi, M. Biegalski, Y.L. Li, A. Sharan, J.
Schubert, R. Uecker, P. Reiche, Y.B. Chen, X.Q. Pan, V. Gopalan,
L.-Q.
Chen,
D.G. Schlom, and C.B. Eom, "Enhancement of Ferroelectricity
in Strained BaTiO3 Thin Films," Science 306 (2004) 1005-1009.
2. J.H.
Haeni, P. Irvin, W. Chang, R. Uecker, P. Reiche, Y.L. Li, S.
Choudhury, W. Tian, M.E. Hawley, B. Craigo, A.K. Tagantsev,
X.Q. Pan, S.K. Streiffer, L.Q. Chen, S.W. Kirchoefer, J. Levy,
and D.G. Schlom, "Room-Temperature Ferroelectricity in
Strained SrTiO3," Nature 430 (2004) 758-761.
3. L.F. Edge,
D.G. Schlom, R.T. Brewer, Y.J. Chabal, J.R. Williams, S.A.
Chambers, C. Hinkle, G. Lucovsky, Y. Yang, S. Stemmer,
M. Copel, B. Holländer, and J. Schubert, "Suppression
of Subcutaneous Oxidation during the Deposition of Amorphous
Lanthanum Aluminate on Silicon," Applied Physics Letters
84 (2004) 4629-4631.
4. J. Lettieri, V. Vaithyanathan, S.K. Eah,
J. Stephens, V. Sih, D.D. Awschalom, J. Levy, and D.G. Schlom, "Epitaxial
Growth and Magnetic Properties of EuO on (001) Si by Molecular-Beam
Epitaxy," Applied Physics Letters 83 (2003) 975-977.
5. D.G.
Schlom and J.H. Haeni, "A Thermodynamic Approach
to Selecting Alternative Gate Dielectrics," MRS Bulletin
27 (2002) 198-204.
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