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Susan Trolier-McKinstry
Professor of Ceramic Science and Engineering;
Director, W. M. Keck Smart Materials
Integration Laboratory
151 Materials Research Laboratory
814-863-8348
STMcKinstry@psu.edu
W.M. Keck Smart Materials Integration Laboratory
www.mri.psu.edu/centers/Keck/index.asp
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Biographical Sketch:
Susan Trolier-McKinstry is
a professor of ceramic science and engineering and at the Pennsylvania
State University, where she also serves as the director of the
W. M. Keck Smart Materials Integration Laboratory. She obtained
B.S. and M.S. degrees in Ceramic Science and Engineering in
1987, and a Ph.D. in Ceramic Science in 1992, all from Penn
State. On graduation she joined the faculty there. She
has held visiting appointments at the Hitachi Central Research
Laboratory in Kokubunji, Tokyo, the Army Research
Laboratory at Fort Monmouth, New Jersey, and the Ecole PolytechniqueFederale
de Lausanne in Switzerland. Her main research interests include
dielectric and piezoelectric thin films, the development of
texture in bulk ceramic piezoelectrics, and spectroscopic ellipsometry. She
has co-authored >180 papers in these areas, and has several
patents. |
Research
Interests:
• Ferroelectric
Materials
• Piezoelectric and dielectric films
• Microelectromechanical systems
• Spectroscopic ellipsometry
• Templated grain growth
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Areas of Research:
Professor
Trolier-McKinstry’s research interests are
centered around structure-processing-property relationships
in electroceramics. This includes work on dielectric and piezoelectric
thin films, texture development in piezoelectric ceramics,
and spectroscopic ellipsometry.
Dielectric thin films are of
interest for on and off-chip decoupling capacitors, as well as
tunable components. Prof.
Trolier-McKinstry’s group emphasizes the development
of a wide range of dielectrics covering the permittivity range
from 30 to 3000. Recent work has emphasized the development
of temperature stable tunable dielectrics in the bismuth zinc
niobate and silver tantalate niobate families. Reduction
of process temperatures has also been a major focus.
In the
piezoelectric films area, Prof. Trolier-McKinstry’s
group has concentrated on the factors that control the magnitude
of the available piezoelectric response. It was demonstrated
that domain wall contributions to the properties, which are
important in bulk piezoelectrics, are very heavily clamped
in films. In order to increase the available piezoelectric
coefficients, highly oriented and epitaxial films of domain
engineered perovskites have been developed. In addition,
piezoelectric films have been incorporated as sensing and actuating
elements in microelectromechanical systems, including accelerometers,
pumps. switches, adaptive optics components, and ultrasound
systems.
The interest in texture development to improve electromechanical
response also extends to bulk piezoelectrics. Joint
programs with Prof. Messing have demonstrated that templated
grain growth can be utilized to achieve textured ceramics with
properties intermediate between those of randomly axed ceramics
and single crystals.Spectroscopic ellipsometry is being utilized
as a characterization tool to probe buried interfaces in electronic
ceramics with angstrom scale depth resolution. |
Technology
impacted by research:
Technologies
affected by her research include on and off-chip decoupling
capacitors, tunable filters and antennae, miniaturized sensors,
micromachined analytical instrumentation, high frequency
biomedical ultrasound, and piezoelectric actuators.
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Journal
Articles and Publications:
1. S. Trolier-McKinstry and P. Muralt, "Thin
Film Piezoelectrics for MEMS," J. Electroceram. 12 (1-2)
7-17 (2004).
2. G.L. Messing, E. M. Sabolsky, S. Trolier-McKinstry,
C. Duran, S.
Kwon, B. Brahmarouru, P. Park, H. Yilmaz, P. W. Rehrig,
K. B. Eitel, E. Suvaci, and M. Seabaugh, "Templated Grain
Growth of Textured Piezoelectric Ceramics," Crit. Rev.
Sol. State Mat. Sci. 29 45-96 (2004).
3. S. J. Gross, S. Tadigadapa, and T. N. Jackson, S. Trolier-McKinstry,
Q. Q. Zhang "Lead-Zirconate-Titanate-Based Piezoelectric
Micromachined Switch," Appl. Phys. Lett. 83 (1) 174-176
(2003). (and Virtual J. Nanoscale Sci. Techn. 8, (2) (2003)
4. F.
Xu, S. Trolier-McKinstry, W. Ren, and B. Xu, "Domain
Wall Motion and its Contribution to the Dielectric and Piezoelectric
Properties of Lead Zirconate Titanate Films," J. Appl.
Phys. 89 (2) 1336-1348 (2001).
5. J. F. Shepard, Jr., P. J. Moses,
and S. Trolier-McKinstry, "The
Wafer Flexure Technique for the Determination of the Transverse
Piezoelectric Coefficient (d31) of PZT Thin Films," Sens.
Actuators A 71 133-138 |
